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ABOVE-THRESHOLD ANALYSIS OF CHANNELLED-SUBSTRATE-PLANAR (CSP) LASERSHORE KA.1981; IEE PROC., PART I; ISSN 0143-7100; GBR; DA. 1981; VOL. 128; NO 1; PP. 9-15; BIBL. 13 REF.Article

A PLANAR SINGLE-SUBSTRATE AC PLASMA DISPLAY.DICK GW; BIAZZO MR.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 4; PP. 429-437; BIBL. 12 REF.Article

THE FABRICATION AND PROPERTIES OF CHALCOGENIDE GLASS MEMORY ARRAYS. = LA FABRICATION ET LES PROPRIETES DES RESEAUX DE MEMOIRE EN VERRES AUX CHALCOGENURESDARGAN CL; BURTON P; REDSTALL RM et al.1975; INTERNATION. J. ELECTRON.; G.B.; DA. 1975; VOL. 38; NO 6; PP. 711-727; BIBL. 8 REF.Article

PLANAR INSB PHOTODIODES FABRICATED BY BE AND MG ION IMPLANTATION.HURWITZ CE; DONNELLY JP.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 9; PP. 753-756; BIBL. 18 REF.Article

MAGNETIC SENSITIVITY OF A DISTRIBUTED SI PLANAR PNPN STRUCTURE SUPPORTING A CONTROLLED CURRENT FILAMENT.BARTELINK DJ; PERSKY G.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 25; NO 10; PP. 590-592; BIBL. 4 REF.Article

FEEDBACK-INDUCED LINE BROADENNING IN CW CHANNAL-SUBSTRATE PLANAR LASER DIODESMILES RO; DANDRIDGE A; TVETEN AB et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 11; PP. 990-992; BIBL. 14 REF.Article

MODELL ZUR BESCHREIBUNG EINES KONTAKTES IN DER HALBLEITER-PLANARTECHNIK. = MODELE POUR LA DESCRIPTION D'UN CONTACT REALISE SUIVANT LA TECHNIQUE PLANAR DES SEMICONDUCTEURSPOSDZIECH G.1974; Z. ELEKTR. INFORM.-U. ENERGITECH.; DTSCH.; DA. 1974; VOL. 4; NO 4; PP. 234-240; BIBL. 9 REF.Article

GRUNDSTRUKTUREN DER ANALOGEN SCHALTUNGSTECHNIK = LES STRUCTURES DE BASE DES CIRCUITS ANALOGIQUESMAASCH G.1978; RADIO FERSEHEN ELEKTRON.; DDR; DA. 1978; VOL. 27; NO 11; PP. 683-686; BIBL. 5 REF.Article

GROOVED PLANAR HIGH PURITY GERMANIUM DETECTORS.DER SUN LEE; SUNG SHAN JAO; HAI HSIN CHANG et al.1977; NUCL. SCI. J.; TWN; DA. 1977; VOL. 14; NO 4; PP. 12-20; ABS. CHI; BIBL. 14 REF.Article

NARROW DOUBLE-CURRENT-CONFINEMENT CHANNELED-SUBSTRATE PLANAR LASER FABRICATED BY DOUBLE ETCHING TECHNIQUECHUNG YIH CHEN; SHYH WANG.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 8; PP. 634-636; BIBL. 12 REF.Article

COMPUTER ANALYSIS OF SHORT-BOUNDARY PLANAR CIRCUITS.OKOSHI T; KITAZAWA S.1975; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1975; VOL. 23; NO 3; PP. 299-306; BIBL. 4 REF.Article

GAAS PLANAR GUNN DIGITAL DEVICES BY SULPHUR-IONIMPLANTATION. = DISPOSITIFS NUMERIQUES A EFFET GUNN PLANAR GAAS PAR IMPLANTATION IONIQUE DE SOUFREMILUTANI T; KURUMADA K.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 25-26; PP. 638-639; BIBL. 6 REF.Article

AUTOMATING MATERIAL FLOW IN SEMICONDUCTOR PROCESSING.EHIBECK HW.1974; ELECTRON. PACKAG. PRODUCT.; U.S.A.; DA. 1974; VOL. 14; NO 11; PP. 83-85Article

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DOMAIN TRANSIT-MODE OSCILLATION IN PLANAR-TYPE GUNN DEVICE OF INP.NAKAMURA Y; SHIBAYAMA A; OHMI T et al.1974; PROC. I.E.E.E.; U.S.A.; DA. 1974; VOL. 62; NO 1; PP. 142-143; BIBL. 11 REF.Article

GUIDING MECHANISMS CONTROLLED BY IMPURITY CONCENTRATIONS-(AL, GA) AS PLANAR STRIPE LASERS WITH DEEP ZN DIFFUSIONUENO M; YONEZU H.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 5; PP. 2361-2371; BIBL. 28 REF.Article

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